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BSM400C12P3G202
Discrete Semiconductor Products

BSM400C12P3G202

NRND
Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 400 A, 1.2 KV, MODULE

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BSM400C12P3G202
Discrete Semiconductor Products

BSM400C12P3G202

NRND
Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 400 A, 1.2 KV, MODULE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSM400C12P3G202
Current - Continuous Drain (Id) @ 25°C400 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds17000 pF
Mounting TypeChassis Mount
Operating Temperature175 °C
Package / CaseModule
Power Dissipation (Max)1570 W
Supplier Device PackageModule
Vgs(th) (Max) @ Id5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 762.50
NewarkEach 1$ 922.48

Description

General part information

BSM400D12P3G002 Series

BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

Documents

Technical documentation and resources