1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Technology | FET Type | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 17000 pF | 2 N-Channel | 400 A | 5.6 V | Module | -40 °C | 150 °C | 1570 W | Module | Chassis Mount | 1.2 kV | 1200 V | Silicon Carbide (SiC) | |||
Rohm Semiconductor | 17000 pF | 400 A | 5.6 V | Module | Module | Chassis Mount | 1.2 kV | N-Channel | 1570 W | 175 °C |