Zenode.ai Logo
Beta
TO-220-3
Discrete Semiconductor Products

MJE18002

Obsolete
ON Semiconductor

2.0 A, 450 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

TO-220-3
Discrete Semiconductor Products

MJE18002

Obsolete
ON Semiconductor

2.0 A, 450 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE18002
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]14
Frequency - Transition13 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]50 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MJE18002 Series

The NPN Bipolar Power Transistor has an applications specific state¿of¿the¿art die designed for use in 220 V line¿operated SWITCHMODE Power supplies and electronic light ballasts.