Specification	MJE18006

Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	6 hFE
Frequency - Transition	14 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	450 V

MJE18002 Series

2.0 A, 450 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJE18002	TO-220	NPN	450 V	50 W	150 °C	-65 °C	100 µA	14	500 mV	13 MHz	TO-220-3	Through Hole	2 A
ON Semiconductor MJE18006	TO-220	NPN	450 V	100 W	150 °C	-65 °C	100 µA	6 hFE	700 mV	14 MHz	TO-220-3	Through Hole
ON Semiconductor MJE18006G	TO-220	NPN	450 V	100 W	150 °C	-65 °C	100 µA	6 hFE	700 mV	14 MHz	TO-220-3	Through Hole
ON Semiconductor MJE18002G	TO-220	NPN	450 V	50 W	150 °C	-65 °C	100 µA	14	500 mV	13 MHz	TO-220-3	Through Hole	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE18002 Series

The NPN Bipolar Power Transistor has an applications specific state¿of¿the¿art die designed for use in 220 V line¿operated SWITCHMODE Power supplies and electronic light ballasts.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing