MJE18002 Series

2.0 A, 450 V NPN Bipolar Power Transistor

Catalog

2.0 A, 450 V NPN Bipolar Power Transistor

Part	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJE18002	TO-220	NPN	450 V	50 W	150 °C	-65 °C	100 µA	14	500 mV	13 MHz	TO-220-3	Through Hole	2 A
ON Semiconductor MJE18006	TO-220	NPN	450 V	100 W	150 °C	-65 °C	100 µA	6 hFE	700 mV	14 MHz	TO-220-3	Through Hole
ON Semiconductor MJE18006G	TO-220	NPN	450 V	100 W	150 °C	-65 °C	100 µA	6 hFE	700 mV	14 MHz	TO-220-3	Through Hole
ON Semiconductor MJE18002G	TO-220	NPN	450 V	50 W	150 °C	-65 °C	100 µA	14	500 mV	13 MHz	TO-220-3	Through Hole	2 A

Catalog

2.0 A, 450 V NPN Bipolar Power Transistor

Key Features

• Improved Efficiency Due to Low Base Drive Requirements:- High and Flat DC Current Gain h FE- Fast Switching- No Coil Required in Base Circuit for Turn-Off (No Current Tail)

• Tight Parametric Distributions are Consistent Lot-to-Lot

• Two Package Choices: Standard TO-220 or Isolated TO-220

• MJF18002, Case 221D, is UL Recognized at 3500 VRMSM: File #E69369

• Pb-Free Package is Available

Description

The NPN Bipolar Power Transistor has an applications specific state¿of¿the¿art die designed for use in 220 V line¿operated SWITCHMODE Power supplies and electronic light ballasts.