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DFN1412D-3
Discrete Semiconductor Products

BAS21QCZ

Obsolete
Freescale Semiconductor - NXP

DIODE GP 200V 250MA DFN1412D-3

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DFN1412D-3
Discrete Semiconductor Products

BAS21QCZ

Obsolete
Freescale Semiconductor - NXP

DIODE GP 200V 250MA DFN1412D-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21QCZ
Capacitance @ Vr, F5 pF
Current - Average Rectified (Io)250 mA
Current - Reverse Leakage @ Vr100 nA
Mounting TypeWettable Flank, Surface Mount
Operating Temperature - Junction150 ¯C
Package / Case3-XDFN Exposed Pad
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDFN1412D-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BAS21 Series

Diode 200 V 250mA Surface Mount, Wettable Flank DFN1412D-3

Documents

Technical documentation and resources