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TO-236AB
Discrete Semiconductor Products

BAS21/8VL

Obsolete
Freescale Semiconductor - NXP

DIODE GP 250V 200MA TO236AB

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DocumentsDatasheet
TO-236AB
Discrete Semiconductor Products

BAS21/8VL

Obsolete
Freescale Semiconductor - NXP

DIODE GP 250V 200MA TO236AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21/8VL
Capacitance @ Vr, F5 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr100 nA
Mounting TypeSurface Mount
Operating Temperature - Junction150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)50 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageTO-236AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]250 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BAS21 Series

Diode 250 V 200mA Surface Mount TO-236AB

Documents

Technical documentation and resources