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SOD-882D
Discrete Semiconductor Products

BAS21LDYL

Active
Freescale Semiconductor - NXP

DIODE GP 200V 330MA 2DFN

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DocumentsDatasheet
SOD-882D
Discrete Semiconductor Products

BAS21LDYL

Active
Freescale Semiconductor - NXP

DIODE GP 200V 330MA 2DFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21LDYL
Capacitance @ Vr, F2 pF
Current - Average Rectified (Io)330 mA
Current - Reverse Leakage @ Vr100 nA
GradeAutomotive
Mounting TypeWettable Flank, Surface Mount
Operating Temperature - Junction150 °C
Package / Case2-XDFN
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageDFN1006D-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.19
100$ 0.09
500$ 0.08
1000$ 0.05
2000$ 0.05
5000$ 0.04
Digi-Reel® 1$ 0.27
10$ 0.19
100$ 0.09
500$ 0.08
1000$ 0.05
2000$ 0.05
5000$ 0.04
Tape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.03
100000$ 0.03
250000$ 0.03

Description

General part information

BAS21 Series

Diode 200 V 330mA Surface Mount, Wettable Flank DFN1006D-2

Documents

Technical documentation and resources