Discrete Semiconductor Products

2N3501

Active

Microchip Technology

SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN

Discrete Semiconductor Products

2N3501

Active

Microchip Technology

SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N3501

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Supplier Device Package	TO-39 (TO-205AD)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

JAN2N3501UB-Transistor Series

MIL-PRF-19500/366

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Qualification	Current - Collector Cutoff (Max) [Max]	Grade	Package / Case
Microchip Technology JAN2N3501UB	Surface Mount	150 V	NPN	100	400 mV	300 mA	500 mW	UB	MIL-PRF-19500/366	10 µA	Military	3-SMD No Lead
Microchip Technology 2N3501	Through Hole	150 V	NPN	100	400 mV	300 mA	1 W	TO-39 (TO-205AD)		10 µA		TO-205AD TO-39-3 Metal Can
Microchip Technology JAN2N3501L	Through Hole	150 V	NPN	100	400 mV	300 mA	1 W	TO-5	MIL-PRF-19500/366	10 µA	Military	TO-205AA TO-5-3 Metal Can
Microchip Technology 2N3501UB	Surface Mount	150 V	NPN	100	400 mV	300 mA	500 mW	UB	MIL-PRF-19500/366	10 µA	Military	3-SMD No Lead
Microchip Technology JANSR2N3501U4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 10.11
		100	$ 9.38
Newark	Each	1	$ 0.52
		100	$ 9.39
		500	$ 9.03

Description

General part information

JAN2N3501UB-Transistor Series

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet