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Discrete Semiconductor Products

JAN2N3501UB

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Microchip Technology

150V 300MA 500MW ROUND-END SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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UB
Discrete Semiconductor Products

JAN2N3501UB

Active
Microchip Technology

150V 300MA 500MW ROUND-END SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N3501UB
Current - Collector (Ic) (Max) [Max]300 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/366
Supplier Device PackageUB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 17.19
Microchip DirectN/A 1$ 18.51
NewarkEach 100$ 17.19
500$ 16.53

Description

General part information

JAN2N3501UB-Transistor Series

This specification covers the performance requirements for NPN, silicon, radiation hardened, low power amplifier and switching 2N3498, 2N3499, 2N3500 and 2N3501 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/366. Two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). RHA level designators "E", "K", "U", "M", "D", "P", "L", "R" and, "F " are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5, TO-39 and surface mount versions (UB only and U4 suffix versions). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/366.

Documents

Technical documentation and resources