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ARFxxxxx
Discrete Semiconductor Products

ARF461AG

Active
Microchip Technology

RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, TO-247

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Search across all available documentation for this part.

DocumentsARF1501 RF MOSFET (VDMOS) 1000 V 750 W 40 MHz T1 DatasheetARF466FL RF MOSFET (VDMOS) 1000 V 300 W 45 MHz T2 Datasheet+4
ARFxxxxx
Discrete Semiconductor Products

ARF461AG

Active
Microchip Technology

RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET, TO-247

Deep-Dive with AI

DocumentsARF1501 RF MOSFET (VDMOS) 1000 V 750 W 40 MHz T1 DatasheetARF466FL RF MOSFET (VDMOS) 1000 V 300 W 45 MHz T2 Datasheet+4

Technical Specifications

Parameters and characteristics for this part

SpecificationARF461AG
ConfigurationN-Channel
Current Rating (Amps)25 µA
Frequency65 MHz
Gain15 dB
Package / CaseTO-247-3
Power - Output150 W
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Voltage - Rated1000 V
Voltage - Test50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 59.22
100$ 40.67
Microchip DirectTUBE 1$ 59.22
100$ 50.12
250$ 47.83
500$ 46.53
1000$ 45.24
5000$ 43.27

Description

General part information

RF-MOSFET-1000V Series

The ARF family of RF power

MOSFETs is optimized for applications requiring frequencies as high as 150 MHz

and operating voltages as high as 400V. Historically, RF power MOSFETs were