APTGLQ100A120TG

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IGBT MODULE 1200V 170A 520W SP4

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Discrete Semiconductor Products

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IGBT MODULE 1200V 170A 520W SP4

Technical Specifications

Parameters and characteristics for this part

Specification	APTGLQ100A120TG

Configuration	Half Bridge
Current - Collector Cutoff (Max) [Max]	50 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	6.15 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	520 W
Supplier Device Package	SP4
Vce(on) (Max) @ Vge, Ic	2.42 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

1200V/Boost chopper/IGBT modules

Part	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Configuration	Input	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	IGBT Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Microchip Technology APTGLQ100H65T3G	2.3 V	SP3F	Full Bridge	Standard	-40 C	175 °C	Module	Chassis Mount	50 µA	6.15 nF	Trench Field Stop	350 W	650 V
Microchip Technology APTGLQ100A120T3AG	2.4 V	SP3	Half Bridge	Standard	-40 C	175 °C	SP3	Through Hole	50 µA	6.15 nF	Trench Field Stop	650 W		185 A	1200 V
Microchip Technology APTGLQ100DA120T1G	2.42 V	SP1	Boost Chopper	Standard	-40 C	175 °C	Module	Chassis Mount	50 µA	6.15 nF	Trench Field Stop	520 W			1200 V
Microchip Technology APTGLQ100A120TG	2.42 V	SP4	Half Bridge	Standard	-40 C	175 °C	Module	Chassis Mount	50 µA	6.15 nF	Trench Field Stop	520 W			1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* IGBT 3 fast

* Low voltage drop

* Low leakage current

Technical documentation and resources