Littelfuse discrete mosfets TO-220_image

Discrete Semiconductor Products

IXTP60N20X4

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Littelfuse/Commercial Vehicle Products

DISCRETE MOSFET 60A 200V X4 TO220/ TUBE

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Discrete Semiconductor Products

IXTP60N20X4

Active

Littelfuse/Commercial Vehicle Products

DISCRETE MOSFET 60A 200V X4 TO220/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP60N20X4

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	TO-220 (IXTP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTP60N20X4 Series

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Part	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXTP60N20T	N-Channel	500 W	60 A	MOSFET (Metal Oxide)	4530 pF	40 mOhm	200 V	-55 °C	175 ░C	73 nC	TO-220-3	5 V	TO-220-3	20 V	10 V	Through Hole
Littelfuse/Commercial Vehicle Products IXTP60N10T	N-Channel	176 W	60 A	MOSFET (Metal Oxide)	2650 pF		100 V	-55 °C	175 ░C		TO-220-3	4.5 V	TO-220-3	30 V	10 V	Through Hole	10 V 49 nC	18 mOhm
Littelfuse/Commercial Vehicle Products IXTP60N20X4	N-Channel		60 A	MOSFET (Metal Oxide)	2450 pF		200 V	-55 °C	175 ░C		TO-220-3	4.5 V	TO-220 (IXTP)	20 V	10 V	Through Hole		21 mOhm	250 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.32
		50	$ 8.24
		100	$ 7.37
		500	$ 6.51
		1000	$ 5.85
Newark	Each	250	$ 6.06
		500	$ 5.63

Description

General part information

IXTP60N20X4 Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources