IXTP60N20X4 Series

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Part	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXTP60N20T	N-Channel	500 W	60 A	MOSFET (Metal Oxide)	4530 pF	40 mOhm	200 V	-55 °C	175 ░C	73 nC	TO-220-3	5 V	TO-220-3	20 V	10 V	Through Hole
Littelfuse/Commercial Vehicle Products IXTP60N10T	N-Channel	176 W	60 A	MOSFET (Metal Oxide)	2650 pF		100 V	-55 °C	175 ░C		TO-220-3	4.5 V	TO-220-3	30 V	10 V	Through Hole	10 V 49 nC	18 mOhm
Littelfuse/Commercial Vehicle Products IXTP60N20X4	N-Channel		60 A	MOSFET (Metal Oxide)	2450 pF		200 V	-55 °C	175 ░C		TO-220-3	4.5 V	TO-220 (IXTP)	20 V	10 V	Through Hole		21 mOhm	250 W

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Key Features

• Low on-state resistance RDS(ON) = 21mΩ

• Low thermal resistance RthJC = 0.6K/W

• Low gate charge Qg = 33 nC

• 175°C operating junction temperature

Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density