IXTP60N20T
ActivePOWER MOSFET, N CHANNEL, 200 V, 60 A, 0.032 OHM, TO-220AB, THROUGH HOLE
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IXTP60N20T
ActivePOWER MOSFET, N CHANNEL, 200 V, 60 A, 0.032 OHM, TO-220AB, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTP60N20T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 73 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 500 W |
| Rds On (Max) @ Id, Vgs [Max] | 40 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.10 | |
| 50 | $ 4.83 | |||
| 100 | $ 4.14 | |||
| 500 | $ 3.68 | |||
| 1000 | $ 3.15 | |||
| 2000 | $ 2.97 | |||
Description
General part information
IXTP60N20X4 Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources
