
Discrete Semiconductor Products
SIA811DJ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4.5A PPAK SC70-6
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Discrete Semiconductor Products
SIA811DJ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4.5A PPAK SC70-6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SIA811DJ-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Power Dissipation (Max) | 1.9 W, 6.5 W |
| Rds On (Max) @ Id, Vgs | 94 mOhm |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SIA811 Series
P-Channel 20 V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
Documents
Technical documentation and resources
No documents available