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PowerPAK SC-70-6 Dual
Discrete Semiconductor Products

SIA811DJ-T1-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 20V 4.5A PPAK SC70-6

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PowerPAK SC-70-6 Dual
Discrete Semiconductor Products

SIA811DJ-T1-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 20V 4.5A PPAK SC70-6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIA811DJ-T1-E3
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds355 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SC-70-6 Dual
Power Dissipation (Max)1.9 W, 6.5 W
Rds On (Max) @ Id, Vgs94 mOhm
Supplier Device PackagePowerPAK® SC-70-6 Dual
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SIA811 Series

P-Channel 20 V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

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