SIA811 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 4.5A PPAK SC70-6
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Feature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Mounting Type | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SC-70-6 Dual | 1.8 V 4.5 V | PowerPAK® SC-70-6 Dual | -55 °C | 150 °C | 20 V | Schottky Diode (Isolated) | 4.5 A | 13 nC | 1.9 W 6.5 W | Surface Mount | MOSFET (Metal Oxide) | 8 V | 355 pF | 94 mOhm | 1 V | P-Channel |
Vishay General Semiconductor - Diodes Division | PowerPAK® SC-70-6 Dual | 1.8 V 4.5 V | PowerPAK® SC-70-6 Dual | -55 °C | 150 °C | 20 V | Schottky Diode (Isolated) | 4.5 A | 13 nC | 1.9 W 6.5 W | Surface Mount | MOSFET (Metal Oxide) | 8 V | 355 pF | 94 mOhm | 1 V | P-Channel |