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SIA527DJ-T1-GE3
Discrete Semiconductor Products

SIA811DJ-T1-GE3

Obsolete
Vishay Dale

MOSFET P-CH 20V 4.5A PPAK SC70-6

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SIA527DJ-T1-GE3
Discrete Semiconductor Products

SIA811DJ-T1-GE3

Obsolete
Vishay Dale

MOSFET P-CH 20V 4.5A PPAK SC70-6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIA811DJ-T1-GE3
Current - Continuous Drain (Id) (Tc)4.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Max)13 nC
Input Capacitance (Ciss) (Max)355 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SC-70-6 Dual
Package NamePowerPAK® SC-70-6 Dual
Power Dissipation (Max)1.9 W, 6.5 W
Rds On (Max)94 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.311m+

CAD

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Description

General part information

SIA811 Series

P-Channel 20 V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

Documents

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