
Discrete Semiconductor Products
RF305BGE6STL
ActiveRohm Semiconductor
RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 3A, 600V V(RRM), SILICON, TO-252,
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Discrete Semiconductor Products
RF305BGE6STL
ActiveRohm Semiconductor
RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 3A, 600V V(RRM), SILICON, TO-252,
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RF305BGE6STL |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-252GE |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RF305BM6SFH Series
RF305BM6SFH is the silicon epitaxial planar type Fast Recovery Diode.
Documents
Technical documentation and resources