Discrete Semiconductor Products

STGW15H120F2

Obsolete

IGBT TRENCH FS 1200V 30A TO-247

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT TRENCH FS 1200V 30A TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	STGW15H120F2

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	67 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	259 W
Supplier Device Package	TO-247-3
Switching Energy	370 µJ, 380 µJ
Test Condition	600 V, 10 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Test Condition	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Mounting Type	Supplier Device Package	Current - Collector Pulsed (Icm)	IGBT Type	Power - Max [Max]	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Gate Charge	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGW15M120DF3	15 A 15 V 22 Ohm 600 V	TO-247-3	175 °C	-55 °C	1200 V	2.3 V	26 ns 122 ns	Through Hole	TO-247	60 A	Trench Field Stop	259 W	270 ns	30 A	226 nC
STMicroelectronics STGW15H120F2	10 Ohm 15 A 15 V 600 V	TO-247-3	175 °C	-55 °C	1200 V	2.6 V		Through Hole	TO-247-3	60 A	Trench Field Stop	259 W		30 A	67 nC	370 µJ 380 µJ
STMicroelectronics STGW15S120DF3	15 A 15 V 22 Ohm 600 V	TO-247-3	175 °C	-55 °C	1200 V	2.05 V		Through Hole	TO-247-3	60 A	Trench Field Stop	259 W	270 ns	30 A	53 nC	1.38 mJ 540 µJ	140 ns	23 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench Field Stop 1200 V 30 A 259 W Through Hole TO-247-3

Technical documentation and resources