STGW15M120DF3
ActiveTRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 15 A LOW LOSS
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STGW15M120DF3
ActiveTRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 15 A LOW LOSS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGW15M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 226 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 259 W |
| Reverse Recovery Time (trr) | 270 ns |
| Supplier Device Package | TO-247 |
| Td (on/off) @ 25°C | 122 ns, 26 ns |
| Test Condition | 600 V, 22 Ohm, 15 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW15 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.10 µs of short-circuit withstand timeVCE(sat)= 1.85 V (typ.) @ IC= 15 ATight parameters distributionSafer parallelingLow thermal resistanceSoft and fast recovery antiparallel diode
Documents
Technical documentation and resources
