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Discrete Semiconductor Products

JAN2N4854U

Active
Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

JAN2N4854U

Active
Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N4854U
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]10 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature [Max]200 C
Operating Temperature [Min]-65 °C
Package / Case6-SMD, No Lead
Power - Max [Max]600 mW
QualificationMIL-PRF-19500/421
Supplier Device Package6-SMD
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 190.77
Microchip DirectN/A 1$ 205.44
NewarkEach 100$ 190.76
500$ 183.43

Description

General part information

JAN2N4854U-Transistor Series

This specification covers the performance requirements for unitized, dual 2N3838, 2N4854 and 2N4854U transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/421.