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ROHM BAJ5CC0T
Discrete Semiconductor Products

STF24N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsManufacturer Catalogue ENProduct Change Notice EN+1
ROHM BAJ5CC0T
Discrete Semiconductor Products

STF24N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsManufacturer Catalogue ENProduct Change Notice EN+1

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF24N60M6
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds960 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

STF24 Series

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package

PartPackage / CaseCurrent - Continuous Drain (Id) @ 25°CTechnologyDrive Voltage (Max Rds On, Min Rds On)Mounting TypeDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]Operating Temperature [Max]Operating Temperature [Min]Input Capacitance (Ciss) (Max) @ VdsSupplier Device PackageFET TypeVgs(th) (Max) @ IdRds On (Max) @ Id, VgsVgs (Max)Power Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs
TO-220FP
STMicroelectronics
STF24N60DM2
TO-220-3 Full Pack
18 A
MOSFET (Metal Oxide)
10 V
Through Hole
600 V
29 nC
150 °C
-55 °C
1055 pF
TO-220 Full Pack
N-Channel
5 V
200 mOhm
25 V
TO-220-F
STMicroelectronics
STF24N65M2
TO-220-3 Full Pack
16 A
MOSFET (Metal Oxide)
10 V
Through Hole
650 V
29 nC
150 °C
-55 °C
1060 pF
TO-220FP
N-Channel
4 V
230 mOhm
25 V
TO-220FP
STMicroelectronics
STF24NM65N
TO-220-3 Full Pack
19 A
MOSFET (Metal Oxide)
10 V
Through Hole
650 V
150 °C
-55 °C
2500 pF
TO-220FP
N-Channel
4 V
190 mOhm
25 V
40 W
70 nC
ROHM BAJ5CC0T
STMicroelectronics
STF24NM60N
TO-220-3 Full Pack
17 A
MOSFET (Metal Oxide)
10 V
Through Hole
600 V
46 nC
150 °C
-55 °C
1400 pF
TO-220FP
N-Channel
4 V
190 mOhm
30 V
ROHM BAJ5CC0T
STMicroelectronics
STF24N60M6
TO-220-3 Full Pack
17 A
MOSFET (Metal Oxide)
10 V
Through Hole
600 V
150 °C
-55 °C
960 pF
TO-220FP
N-Channel
4.75 V
190 mOhm
25 V
23 nC
TO-220FP
STMicroelectronics
STF24N60M2
TO-220-3 Full Pack
18 A
MOSFET (Metal Oxide)
10 V
Through Hole
600 V
29 nC
150 °C
-55 °C
1060 pF
TO-220FP
N-Channel
4 V
190 mOhm
25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 614$ 3.58
Tube 1$ 2.66
50$ 1.35
100$ 1.27
NewarkEach 1$ 4.53
10$ 3.60
25$ 2.67
50$ 2.58
100$ 2.49
250$ 2.34
500$ 2.18

Description

General part information

STF24 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.