STF24 Series

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package

Catalog

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STF24N60DM2	TO-220-3 Full Pack	18 A	MOSFET (Metal Oxide)	10 V	Through Hole	600 V	29 nC	150 °C	-55 °C	1055 pF	TO-220 Full Pack	N-Channel	5 V	200 mOhm	25 V
STMicroelectronics STF24N65M2	TO-220-3 Full Pack	16 A	MOSFET (Metal Oxide)	10 V	Through Hole	650 V	29 nC	150 °C	-55 °C	1060 pF	TO-220FP	N-Channel	4 V	230 mOhm	25 V
STMicroelectronics STF24NM65N	TO-220-3 Full Pack	19 A	MOSFET (Metal Oxide)	10 V	Through Hole	650 V		150 °C	-55 °C	2500 pF	TO-220FP	N-Channel	4 V	190 mOhm	25 V	40 W	70 nC
STMicroelectronics STF24NM60N	TO-220-3 Full Pack	17 A	MOSFET (Metal Oxide)	10 V	Through Hole	600 V	46 nC	150 °C	-55 °C	1400 pF	TO-220FP	N-Channel	4 V	190 mOhm	30 V
STMicroelectronics STF24N60M6	TO-220-3 Full Pack	17 A	MOSFET (Metal Oxide)	10 V	Through Hole	600 V		150 °C	-55 °C	960 pF	TO-220FP	N-Channel	4.75 V	190 mOhm	25 V		23 nC
STMicroelectronics STF24N60M2	TO-220-3 Full Pack	18 A	MOSFET (Metal Oxide)	10 V	Through Hole	600 V	29 nC	150 °C	-55 °C	1060 pF	TO-220FP	N-Channel	4 V	190 mOhm	25 V

Catalog

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.