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TO-220-3FullPack_SOT186A
Discrete Semiconductor Products

PSMN8R5-100XSQ

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 49A TO220F

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TO-220-3FullPack_SOT186A
Discrete Semiconductor Products

PSMN8R5-100XSQ

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 49A TO220F

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN8R5-100XSQ
Current - Continuous Drain (Id) (Tj)49 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)100 nC
Input Capacitance (Ciss) (Max)5512 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Package NameTO-220F
Power Dissipation (Max)55 W
Rds On (Max)8.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

PSMN8 Series

N-Channel 100 V 49A (Tj) 55W (Tc) Through Hole TO-220F

Documents

Technical documentation and resources