Discrete Semiconductor Products

PSMN8R0-30YL,115

Obsolete

MOSFET N-CH 30V 62A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 62A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R0-30YL,115

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1005 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	56 W
Rds On (Max) @ Id, Vgs	8.3 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN8R0-30YL,115	LFPAK56 Power-SO8	4.5 V 10 V	Surface Mount	SC-100 SOT-669	30 V	N-Channel	20 V	8.3 mOhm	18.3 nC	62 A	-55 °C	175 ░C	1005 pF	56 W	MOSFET (Metal Oxide)	2.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 62A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available