PSMN8 Series
Manufacturer: NXP USA Inc.
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⌘K
MOSFET N-CH 30V 62A LFPAK56
| Part | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Package Name | Rds On (Max) | Vgs (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Current - Continuous Drain (Id) (Tc) | Technology | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) (Tj) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | -55 °C | 175 °C | N-Channel | LFPAK56 Power-SO8 | 8.3 mOhm | 20 V | 56 W | 30 V | 2.15 V | 62 A | MOSFET (Metal Oxide) | SC-100 SOT-669 | Surface Mount | 1005 pF 1005 pF | 18.3 nC | 10 V | 4.5 V | ||
 NXP USA Inc. | -55 °C | 175 °C | N-Channel | TO-220F | 8.5 mOhm | 20 V | 55 W | 100 V | 4 V | MOSFET (Metal Oxide) | Isolated Tab TO-220-3 Full Pack | Through Hole | 5512 pF | 100 nC | 10 V | 49 A | |||
NXP USA Inc. | -55 °C | 175 °C | N-Channel | LFPAK56 Power-SO8 | 7.9 mOhm | 20 V | 42 W | 30 V | 1.95 V | 54 A 54 A | MOSFET (Metal Oxide) | SC-100 SOT-669 | Surface Mount | 848 pF | 15 nC | 10 V | 4.5 V |