Specification	FDMS3500

Current - Continuous Drain (Id) @ 25°C	49 A, 9.2 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC
Input Capacitance (Ciss) (Max) @ Vds	4765 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS3572 Series

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMS3500	91 nC	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	4765 pF	20 V	Surface Mount	8-PowerTDFN	14.5 mOhm	75 V	2.5 W 96 W	9.2 A 49 A	8-PQFN (5x6)	3 V
ON Semiconductor FDMS3572		6 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	2490 pF	20 V	Surface Mount	8-PowerWDFN	16.5 mOhm	80 V	2.5 W 78 W	8.8 A 22 A	8-MLP (5x6) Power56	4 V	40 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.85
		10	$ 1.85
		100	$ 1.27
		500	$ 1.03
		1000	$ 0.95
	Digi-Reel®	1	$ 2.85
		10	$ 1.85
		100	$ 1.27
		500	$ 1.03
		1000	$ 0.95
	Tape & Reel (TR)	3000	$ 0.88
Newark	Each (Supplied on Full Reel)	3000	$ 1.12
		6000	$ 1.06
		12000	$ 0.95
		18000	$ 0.92
		30000	$ 0.88
ON Semiconductor	N/A	1	$ 0.81

Description

General part information

FDMS3572 Series

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.