FDMS3572 Series

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Catalog

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMS3500	91 nC	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	4765 pF	20 V	Surface Mount	8-PowerTDFN	14.5 mOhm	75 V	2.5 W 96 W	9.2 A 49 A	8-PQFN (5x6)	3 V
ON Semiconductor FDMS3572		6 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	2490 pF	20 V	Surface Mount	8-PowerWDFN	16.5 mOhm	80 V	2.5 W 78 W	8.8 A 22 A	8-MLP (5x6) Power56	4 V	40 nC

Catalog

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Key Features

• Maximum RDS(on)= 14.5 mΩ at VGS= 10 V, ID= 11.5 A

• Maximum RDS(on)= 16.3 mΩ at VGS= 4.5 V, ID= 10 A

• Advanced Package and Silicon combination for low rDS(on)

• MSL1 robust package design

• 100% UIL Tested

• RoHS Compliant

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.