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8-MLP, Power56
Discrete Semiconductor Products

FDMS3572

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 80 V, 8.8 A, 0.0165 OHM, POWER 56, SURFACE MOUNT

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8-MLP, Power56
Discrete Semiconductor Products

FDMS3572

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 80 V, 8.8 A, 0.0165 OHM, POWER 56, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS3572
Current - Continuous Drain (Id) @ 25°C22 A, 8.8 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds2490 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.5 W, 78 W
Rds On (Max) @ Id, Vgs16.5 mOhm
Supplier Device Package8-MLP (5x6), Power56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.38
10$ 2.21
100$ 1.54
500$ 1.25
1000$ 1.16
Digi-Reel® 1$ 3.38
10$ 2.21
100$ 1.54
500$ 1.25
1000$ 1.16
Tape & Reel (TR) 3000$ 1.12
NewarkEach (Supplied on Cut Tape) 1$ 3.21
10$ 1.98
25$ 1.83
50$ 1.68
ON SemiconductorN/A 1$ 1.03

Description

General part information

FDMS3572 Series

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.