Integrated Circuits (ICs)

HIP2100IR4Z

Obsolete

Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 12DFN

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Integrated Circuits (ICs)

HIP2100IR4Z

Obsolete

Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 12DFN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HIP2100IR4Z

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	114 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	4 V, 7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	10 ns
Rise / Fall Time (Typ) [custom]	10 ns
Supplier Device Package	12-DFN (4x4)
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	9 V

HIP2100 Series

Part	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Channel Type	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Mounting Type	Supplier Device Package	Driven Configuration	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Renesas Electronics Corporation HIP2100IR4ZT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	12-VFDFN Exposed Pad	Surface Mount	12-DFN (4x4)	Half-Bridge	N-Channel MOSFET	2 A	2 A
Renesas Electronics Corporation HIP2100IBZ	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IBT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IB	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IR4Z	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	12-VFDFN Exposed Pad	Surface Mount	12-DFN (4x4)	Half-Bridge	MOSFET (N-Channel)	2 A	2 A
Renesas Electronics Corporation HIP2100EIBT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC-EP	Half-Bridge	N-Channel MOSFET	2 A	2 A			0.154 in	3.9 mm
Renesas Electronics Corporation HIP2100EIB	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC-EP	Half-Bridge	N-Channel MOSFET	2 A	2 A			0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HIP2100 Series

Half-Bridge Gate Driver IC Non-Inverting 12-DFN (4x4)

Documents

Technical documentation and resources