
HIP2100 Series
Manufacturer: Renesas Electronics Corporation

IC GATE DRVR HALF-BRIDGE 12DFN
| Part | High Side Voltage - Max (Bootstrap) [Max] | Voltage - Supply [Min] | Voltage - Supply [Max] | Logic Voltage - VIL, VIH | Operating Temperature [Min] | Operating Temperature [Max] | Input Type | Channel Type | Number of Drivers | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case | Mounting Type | Supplier Device Package | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case [y] | Package / Case [x] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 12-VFDFN Exposed Pad | Surface Mount | 12-DFN (4x4) | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | ||||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 8-SOIC | Surface Mount | 8-SOIC | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | 3.9 mm | 0.154 in | ||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 8-SOIC | Surface Mount | 8-SOIC | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | 3.9 mm | 0.154 in | ||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 8-SOIC | Surface Mount | 8-SOIC | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | 3.9 mm | 0.154 in | ||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 12-VFDFN Exposed Pad | Surface Mount | 12-DFN (4x4) | Half-Bridge | MOSFET (N-Channel) | 2 A | 2 A | ||||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 8-SOIC | Surface Mount | 8-SOIC-EP | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | 0.154 in | 3.9 mm | ||
Renesas Electronics Corporation | 114 V | 9 V | 14 V | 4 V 7 V | -55 °C | 150 °C | Non-Inverting | Independent | 2 | 10 ns | 10 ns | 8-SOIC | Surface Mount | 8-SOIC-EP | Half-Bridge | N-Channel MOSFET | 2 A | 2 A | 0.154 in | 3.9 mm |