Integrated Circuits (ICs)

HIP2100IBZ

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Renesas Electronics Corporation

100V/2A PEAK HIGH-FREQUENCY HALF BRIDGE DRIVER WITH CMOS LOGIC INPUTS

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DocumentsDatasheet Product Change Notice EN

Integrated Circuits (ICs)

HIP2100IBZ

Active

Renesas Electronics Corporation

100V/2A PEAK HIGH-FREQUENCY HALF BRIDGE DRIVER WITH CMOS LOGIC INPUTS

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HIP2100IBZ

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	114 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	4 V, 7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	10 ns
Rise / Fall Time (Typ) [custom]	10 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	9 V

HIP2100 Series

Part	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Channel Type	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Mounting Type	Supplier Device Package	Driven Configuration	Gate Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Renesas Electronics Corporation HIP2100IR4ZT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	12-VFDFN Exposed Pad	Surface Mount	12-DFN (4x4)	Half-Bridge	N-Channel MOSFET	2 A	2 A
Renesas Electronics Corporation HIP2100IBZ	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IBT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IB	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC	Half-Bridge	N-Channel MOSFET	2 A	2 A	3.9 mm	0.154 in
Renesas Electronics Corporation HIP2100IR4Z	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	12-VFDFN Exposed Pad	Surface Mount	12-DFN (4x4)	Half-Bridge	MOSFET (N-Channel)	2 A	2 A
Renesas Electronics Corporation HIP2100EIBT	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC-EP	Half-Bridge	N-Channel MOSFET	2 A	2 A			0.154 in	3.9 mm
Renesas Electronics Corporation HIP2100EIB	114 V	9 V	14 V	4 V 7 V	-55 °C	150 °C	Non-Inverting	Independent	2	10 ns	10 ns	8-SOIC	Surface Mount	8-SOIC-EP	Half-Bridge	N-Channel MOSFET	2 A	2 A			0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.36
		10	$ 3.92
		25	$ 3.70
		100	$ 3.21
		250	$ 3.05
		980	$ 2.30
		2940	$ 2.19

Description

General part information

HIP2100 Series

The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.