Discrete Semiconductor Products
CSD25481F4T
ActiveTexas Instruments
-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 105 MOHM, GATE ESD PROTECTION
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Discrete Semiconductor Products
CSD25481F4T
ActiveTexas Instruments
-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 105 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD25481F4T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.91 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 189 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs | 88 mOhm |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -12 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.60 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 0.60 | ||
| 10 | $ 0.49 | |||
| 100 | $ 0.38 | |||
| Tape & Reel (TR) | 250 | $ 0.38 | ||
| 500 | $ 0.32 | |||
| 1250 | $ 0.32 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.29 | |
| 10 | $ 1.23 | |||
| 25 | $ 1.16 | |||
| 50 | $ 1.12 | |||
| 100 | $ 1.07 | |||
| 250 | $ 1.04 | |||
| 500 | $ 1.01 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.79 | |
| 100 | $ 0.51 | |||
| 250 | $ 0.39 | |||
| 1000 | $ 0.26 | |||
Description
General part information
CSD25481F4 Series
This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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Documents
Technical documentation and resources
