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CSD25481F4

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 105 MOHM, GATE ESD PROTECTION

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3-Picostar
Discrete Semiconductor Products

CSD25481F4

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 105 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25481F4
Current - Continuous Drain (Id) @ 25°C2.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.913 nC
Input Capacitance (Ciss) (Max) @ Vds189 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs88 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-12 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.22
100$ 0.11
500$ 0.10
1000$ 0.08
Digi-Reel® 1$ 0.30
10$ 0.22
100$ 0.11
500$ 0.10
1000$ 0.08
Tape & Reel (TR) 3000$ 0.07
6000$ 0.07
Texas InstrumentsLARGE T&R 1$ 0.15
100$ 0.10
250$ 0.07
1000$ 0.05

Description

General part information

CSD25481F4 Series

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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