Discrete Semiconductor Products

FJP3307DH2TU

Obsolete

ON Semiconductor

TRANS NPN 400V 8A TO220-3

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Discrete Semiconductor Products

FJP3307DH2TU

Obsolete

ON Semiconductor

TRANS NPN 400V 8A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FJP3307DH2TU

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	26
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJP3307D Series

High Voltage Fast Switching NPN Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor FJP3307DTU	400 V	8 A	5 hFE	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DTU	400 V	8 A	8	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1665	$ 0.18
		1665	$ 0.18

Description

General part information

FJP3307D Series

The FJP3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJP3307D is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.

Documents

Technical documentation and resources