Specification	FJP3307DTU

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJP3307D Series

High Voltage Fast Switching NPN Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor FJP3307DTU	400 V	8 A	5 hFE	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DTU	400 V	8 A	8	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	650	$ 0.46
		650	$ 0.46

Description

General part information

FJP3307D Series

The FJP3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJP3307D is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.