FJP3307D Series

High Voltage Fast Switching NPN Power Transistor

Catalog

High Voltage Fast Switching NPN Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor FJP3307DTU	400 V	8 A	5 hFE	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DH2TU	400 V	8 A	26	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V
ON Semiconductor FJP3307DTU	400 V	8 A	8	150 °C	NPN	80 W	TO-220-3	Through Hole	TO-220-3	3 V

Catalog

High Voltage Fast Switching NPN Power Transistor

Key Features

• High-Voltage Capability

• High Switching Speed

• Wide Safe Operating Area

• Built-in Diode between Collector and Emitter

Description

The FJP3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJP3307D is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.