FCH072N60F
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FRFET<SUP>®</SUP>, 600 V, 52 A, 72 MΩ, TO-247
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FCH072N60F
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>® </SUP>II, FRFET<SUP>®</SUP>, 600 V, 52 A, 72 MΩ, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | FCH072N60F |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 52 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 215 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8660 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 481 W |
| Rds On (Max) @ Id, Vgs | 72 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.80 | |
| 10 | $ 6.75 | |||
| 100 | $ 5.02 | |||
| 500 | $ 4.62 | |||
| Newark | Each | 1 | $ 10.48 | |
| 10 | $ 10.31 | |||
| 25 | $ 9.41 | |||
| 50 | $ 8.51 | |||
| 100 | $ 8.04 | |||
| 250 | $ 7.56 | |||
| ON Semiconductor | N/A | 1 | $ 4.25 | |
Description
General part information
FCH072N60F_F085 Series
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Documents
Technical documentation and resources
