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TO-247-3 Long Lead EP
Discrete Semiconductor Products

FCH072N60F-F085

Obsolete
ON Semiconductor

N-CHANNEL SUPERFET II™ FRFET MOSFET 600V, 52A, 62MΩ

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TO-247-3 Long Lead EP
Discrete Semiconductor Products

FCH072N60F-F085

Obsolete
ON Semiconductor

N-CHANNEL SUPERFET II™ FRFET MOSFET 600V, 52A, 62MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH072N60F-F085
Current - Continuous Drain (Id) @ 25°C52 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]210 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6330 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)481 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs72 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FCH072N60F_F085 Series

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.