Specification	FCH072N60

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	5890 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	481 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCH072N60F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Grade
ON Semiconductor FCH072N60F	481 W	72 mOhm	52 A	10 V	5 V	215 nC	TO-247-3	TO-247-3	8660 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	20 V	600 V
ON Semiconductor FCH072N60	481 W	72 mOhm	52 A	10 V	3.5 V		TO-247-3	TO-247-3	5890 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	20 V	600 V	125 nC
ON Semiconductor FCH072N60F-F085	481 W	72 mOhm	52 A	10 V	5 V	210 nC	TO-247-3	TO-247-3	6330 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	20 V	600 V		AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.95
		30	$ 5.90
		120	$ 5.00
		510	$ 4.72
Newark	Each	250	$ 5.17
		250	$ 5.17
		500	$ 5.02
		500	$ 5.02
ON Semiconductor	N/A	1	$ 4.34

Description

General part information

FCH072N60F_F085 Series

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.