PWD13F60TR
ActiveHIGH-DENSITY POWER DRIVER - HIGH VOLTAGE FULL BRIDGE WITH INTEGRATED GATE DRIVER
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PWD13F60TR
ActiveHIGH-DENSITY POWER DRIVER - HIGH VOLTAGE FULL BRIDGE WITH INTEGRATED GATE DRIVER
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Technical Specifications
Parameters and characteristics for this part
| Specification | PWD13F60TR |
|---|---|
| Applications | Industrial |
| Current - Output / Channel | 8 A |
| Current - Peak Output | 32 A |
| Fault Protection | UVLO |
| Interface | Logic |
| Load Type | Inductive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Output Configuration | Half Bridge (2) |
| Package / Case | 28-PowerVQFN |
| Rds On (Typ) | 320 mOhm |
| Supplier Device Package | 28-VFQFPN (10x13) |
| Technology | Power MOSFET |
| Voltage - Supply | 15 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PWD13F60 Series
The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration.
The integrated power MOSFETs have low RDS(on)of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.
The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage.
Documents
Technical documentation and resources