PWD13F60 Series

High-density power driver - high voltage full bridge with integrated gate driver

Catalog

High-density power driver - high voltage full bridge with integrated gate driver

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Typ)	Voltage - Supply	Current - Output / Channel	Mounting Type	Interface	Current - Peak Output	Technology	Output Configuration	Supplier Device Package	Package / Case	Load Type	Applications	Fault Protection
STMicroelectronics PWD13F60TR	-40 C	125 °C	320 mOhm	15 VDC	8 A	Surface Mount	Logic	32 A	Power MOSFET	Half Bridge (2)	28-VFQFPN (10x13)	28-PowerVQFN	Inductive	Industrial	UVLO
STMicroelectronics PWD13F60	-40 C	125 °C	320 mOhm	15 VDC	8 A	Surface Mount	Logic	32 A	Power MOSFET	Half Bridge (2)	28-VFQFPN (10x13)	28-PowerVQFN	Inductive	Industrial	UVLO

Catalog

High-density power driver - high voltage full bridge with integrated gate driver

Description

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on)of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space. The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage. The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors. The device is available in a compact VFQFPN package.