
Discrete Semiconductor Products
JANTXV2N1613L
ActiveMicrochip Technology
POWER BJT TO-5 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Documents2N718A 2N1613 2N1613L

Discrete Semiconductor Products
JANTXV2N1613L
ActiveMicrochip Technology
POWER BJT TO-5 ROHS COMPLIANT: YES
Deep-Dive with AI
Documents2N718A 2N1613 2N1613L
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N1613L |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 800 mW |
| Qualification | MIL-PRF-19500/181 |
| Supplier Device Package | TO-39 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 343.75 | |
| Microchip Direct | N/A | 1 | $ 131.04 | |
| Newark | Each | 100 | $ 121.68 | |
| 500 | $ 117.00 | |||
Description
General part information
JANTXV2N1613L-Transistor Series
This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181.
Documents
Technical documentation and resources