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Discrete Semiconductor Products

2N1613A

Active
Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Discrete Semiconductor Products

2N1613A

Active
Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N1613A
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]800 mW
Supplier Device PackageTO-5
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 18.32
Microchip DirectN/A 1$ 19.73
NewarkEach 100$ 18.32
500$ 17.61

Description

General part information

JANTXV2N1613L-Transistor Series

This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181.

Documents

Technical documentation and resources