Discrete Semiconductor Products
R6035ENZC17
ActiveRohm Semiconductor
600V 35A TO-3PF, LOW-NOISE POWER MOSFET
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Search across all available documentation for this part.
Discrete Semiconductor Products
R6035ENZC17
ActiveRohm Semiconductor
600V 35A TO-3PF, LOW-NOISE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6035ENZC17 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2720 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 120 W |
| Rds On (Max) @ Id, Vgs | 102 mOhm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.36 | |
| 30 | $ 1.87 | |||
| 120 | $ 1.71 | |||
Description
General part information
R6035KNZ4 Series
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Documents
Technical documentation and resources
