Discrete Semiconductor Products

STP14NK50Z

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STMicroelectronics

N-CHANNEL 500V - 0.34 OHM - 14A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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DocumentsTN1156 +15

Discrete Semiconductor Products

STP14NK50Z

Active

STMicroelectronics

N-CHANNEL 500V - 0.34 OHM - 14A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

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DocumentsTN1156 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP14NK50Z

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP14 Series

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP14NK50ZFP	30 V	14 A	Through Hole	380 mOhm	4.5 V	TO-220FP	10 V	N-Channel	500 V	MOSFET (Metal Oxide)	150 °C	-55 °C	92 nC	2000 pF	35 W	TO-220-3 Full Pack
STMicroelectronics STP14N80K5	30 V	12 A	Through Hole	445 mOhm	5 V	TO-220	10 V	N-Channel	800 V	MOSFET (Metal Oxide)	150 °C	-55 °C			130 W	TO-220-3	22 nC	620 pF
STMicroelectronics STP14NF10	20 V	15 A	Through Hole	130 mOhm	4 V	TO-220	10 V	N-Channel	100 V	MOSFET (Metal Oxide)	175 °C	-55 °C	21 nC	460 pF	60 W	TO-220-3
STMicroelectronics STP14NK50Z	30 V	14 A	Through Hole	380 mOhm	4.5 V	TO-220	10 V	N-Channel	500 V	MOSFET (Metal Oxide)	150 °C	-55 °C	92 nC	2000 pF	150 W	TO-220-3
STMicroelectronics STP14NM50N	25 V	12 A	Through Hole	320 mOhm	4 V	TO-220	10 V	N-Channel	500 V	MOSFET (Metal Oxide)	150 °C	-55 °C	27 nC	816 pF	90 W	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	890	$ 2.02
	Tube	1	$ 4.08
		50	$ 3.23
		100	$ 2.77
		500	$ 2.46
		1000	$ 2.11
		2000	$ 1.99
		5000	$ 1.91

Description

General part information

STP14 Series

The SuperMESHTMseries is obtained through an extreme optimization of ST’s well established strip-based PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.

STP14NK50Z

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STP14NK50Z

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Technical Specifications

STP14 Series

Pricing

Description

STP14 Series

Documents

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STP14 Series