STP14N80K5
ActiveN-CHANNEL 800 V, 0.400 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
STP14N80K5
ActiveN-CHANNEL 800 V, 0.400 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP14N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 620 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) @ Id, Vgs | 445 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 1.64 | |
Description
General part information
STP14N80K5 Series
The SuperMESHTMseries is obtained through an extreme optimization of ST’s well established strip-based PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts.
Documents
Technical documentation and resources
