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SCS215AJTLL

Discrete Semiconductor Products

SCS215AJTLL

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Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 15 A, 23 NC, TO-263AB

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Search across all available documentation for this part.

DocumentsSCS215AJTLL Datasheet (PDF)Application Note EN +48

SCS215AJTLL

Discrete Semiconductor Products

SCS215AJTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 15 A, 23 NC, TO-263AB

Deep-Dive with AI

DocumentsSCS215AJTLL Datasheet (PDF)Application Note EN +48

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS215AJTLL

Capacitance @ Vr, F	550 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.43
		10	$ 5.51
		100	$ 4.59
		500	$ 4.05
	Digi-Reel®	1	$ 6.43
		10	$ 5.51
		100	$ 4.59
		500	$ 4.05
	N/A	2869	$ 7.85
	Tape & Reel (TR)	1000	$ 2.89
Mouser	N/A	1	$ 7.25
		10	$ 5.34
		100	$ 3.91
		500	$ 3.35
		1000	$ 3.31
Newark	Each	1	$ 8.14
		10	$ 5.54
		25	$ 5.05
		50	$ 4.56
		100	$ 4.07
		250	$ 4.06
		500	$ 3.48

Description

General part information

SCS2x Series

Switching loss reduced, enabling high-speed switching. (Surface mount package)

Documents

Technical documentation and resources

SCS215AJTLL Datasheet (PDF)

Application Note EN

SiC Flammability

Related Document

TO-263AB (LPTL) Taping Spec

How to Use LTspice® Models

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Condition of Soldering

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Precautions for Thermal Resistance of Insulation Sheet

Inner Structure

Package Information

Basics of Thermal Resistance and Heat Dissipation

Package Dimensions

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Explanation for Marking

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Part Explanation

Application Note

How to Use Thermal Models

Constitution Materials List

Environmental Data

Reliability Test Result

Manufacturing Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Measurement Method and Usage of Thermal Resistance RthJC

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

What is a Thermal Model? (SiC Power Device)

Anti-Whisker formation

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Diode Types and Applications

Technical Article

ESD Data

Characteristics Data

4 Steps for Successful Thermal Designing of Power Devices

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

About Export Administration Regulations (EAR)

Export Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

PCB Layout Thermal Design Guide

Compliance of the ELV directive

Environmental Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Notes for Calculating Power Consumption:Static Operation

What Is Thermal Design

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Two-Resistor Model for Thermal Simulation

SCS2x Series

650V, 6A, SMD, Silicon-carbide (SiC) SBD for Automotive

Part	Grade	Speed	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Supplier Device Package	Qualification	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor SCS206AJHRTLL	Automotive	500 mA	175 ░C	1.55 V	0 ns	120 µA	219 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	6 A	SiC (Silicon Carbide) Schottky	TO-263AB	AEC-Q101
Rohm Semiconductor SCS206AJTLL		500 mA	175 ░C	1.55 V	0 ns	120 µA	219 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	6 A	SiC (Silicon Carbide) Schottky	TO-263AB
Rohm Semiconductor SCS215AJTLL		500 mA	175 ░C		0 ns	300 µA	550 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	15 A	SiC (Silicon Carbide) Schottky	TO-263AB		1.55 V