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ROHM Semiconductor-SCS206AJTLL Rectifiers Diode Schottky 650V 6A 3-Pin(2+Tab) LPTL T/R

Discrete Semiconductor Products

SCS206AJTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, BARRIER, 650V SERIES, SINGLE, 650 V, 6 A, 9 NC, TO-263AB

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Search across all available documentation for this part.

DocumentsSCS206AJTLL Datasheet (PDF)Application Note EN +48

ROHM Semiconductor-SCS206AJTLL Rectifiers Diode Schottky 650V 6A 3-Pin(2+Tab) LPTL T/R

Discrete Semiconductor Products

SCS206AJTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, BARRIER, 650V SERIES, SINGLE, 650 V, 6 A, 9 NC, TO-263AB

Deep-Dive with AI

DocumentsSCS206AJTLL Datasheet (PDF)Application Note EN +48

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS206AJTLL

Capacitance @ Vr, F	219 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	120 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2831	$ 4.69
Mouser	N/A	1	$ 2.79
		10	$ 1.75
		1000	$ 1.68
Newark	Each	1	$ 4.20
		10	$ 3.18
		25	$ 2.89
		50	$ 2.59
		100	$ 2.30
		250	$ 2.10
		500	$ 1.89

Description

General part information

SCS2x Series

Switching loss reduced, enabling high-speed switching. (Surface mount package)

Documents

Technical documentation and resources

SCS206AJTLL Datasheet (PDF)

Application Note EN

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Part Explanation

Application Note

Explanation for Marking

Package Information

Judgment Criteria of Thermal Evaluation

What Is Thermal Design

Notes for Calculating Power Consumption:Static Operation

Notes for Temperature Measurement Using Thermocouples

Anti-Whisker formation

Package Information

Compliance of the ELV directive

Environmental Data

Basics of Thermal Resistance and Heat Dissipation

How to Use LTspice® Models

Schematic Design & Verification

Package Dimensions

Package Information

Reliability Test Result

Manufacturing Data

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

About Export Administration Regulations (EAR)

Export Information

Two-Resistor Model for Thermal Simulation

What is a Thermal Model? (SiC Power Device)

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Inner Structure

Package Information

PCB Layout Thermal Design Guide

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Diode Types and Applications

Technical Article

Precautions for Thermal Resistance of Insulation Sheet

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Constitution Materials List

Environmental Data

Moisture Sensitivity Level

Package Information

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

About Flammability of Materials

Environmental Data

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Notes for Temperature Measurement Using Forward Voltage of PN Junction

How to Use Thermal Models

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Taping Information

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

4 Steps for Successful Thermal Designing of Power Devices

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

ESD Data

Characteristics Data

Measurement Method and Usage of Thermal Resistance RthJC

Precautions When Measuring the Rear of the Package with a Thermocouple

Method for Monitoring Switching Waveform

Schematic Design & Verification

Condition of Soldering

Package Information

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

SCS2x Series

650V, 6A, SMD, Silicon-carbide (SiC) SBD for Automotive

Part	Grade	Speed	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Supplier Device Package	Qualification	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor SCS206AJHRTLL	Automotive	500 mA	175 ░C	1.55 V	0 ns	120 µA	219 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	6 A	SiC (Silicon Carbide) Schottky	TO-263AB	AEC-Q101
Rohm Semiconductor SCS206AJTLL		500 mA	175 ░C	1.55 V	0 ns	120 µA	219 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	6 A	SiC (Silicon Carbide) Schottky	TO-263AB
Rohm Semiconductor SCS215AJTLL		500 mA	175 ░C		0 ns	300 µA	550 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	15 A	SiC (Silicon Carbide) Schottky	TO-263AB		1.55 V